UMC2NT1 |
RFQ for UMC2NT1 Required Field |
 |
| Technical/Catalog Information | UMC2NT1 |
| Vendor | ON Semiconductor |
| Category | Discrete Semiconductor Products |
| Transistor Type | 1 NPN, 1 PNP - Pre-Biased (Dual) |
| Voltage - Collector Emitter Breakdown (Max) | 50V |
| Current - Collector (Ic) (Max) | 100mA |
| Power - Max | 150mW |
| Resistor - Base (R1) (Ohms) | 22K |
| Resistor - Emitter Base (R2) (Ohms) | 22K |
| Vce Saturation (Max) @ Ib, Ic | 250mV @ 300A, 10mA |
| Current - Collector Cutoff (Max) | 500nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 60 @ 5mA, 10V |
| Frequency - Transition | - |
| Mounting Type | Surface Mount |
| Package / Case | SC-70-5, SC-88A, SOT-323-5, SOT-353, 5-TSSOP |
| Packaging | Tape & Reel (TR) |
| Drawing Number | * |
| Lead Free Status | Contains Lead |
| RoHS Status | RoHS Non-Compliant |
| Other Names | UMC2NT1 UMC2NT1 UMC2NT1OS ND UMC2NT1OSND UMC2NT1OS |
| Product | Manufacturers | Pack | D/C |
| UMC2NT1 | - | SOT353 | - |
The Bias Resistor Transistor (BRT) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base−emitter resistor. These digital transistors are designed to replace a single device and its external resistor bias network. The BRT eliminates these individual components by integrating them into a single device. In the UMC2NT1 series, two complementary BRT devices are housed in the SOT−353 package which is ideal for low power surface mount applications where board space is at a premium.
Features |
| • Pb−Free Packages are Available• Simplifies Circuit Design• Reduces Board Space• Reduces Component Count• Available in 8 mm, 7 inch/3000 Unit Tape and Reel |
|
Parameter |
VALUE |
SYMBOL |
UNIT |
|
Collector-Base Voltage |
50 |
VCBO |
Vdc |
|
Collector-Emitter Voltage |
50 |
VCEO |
Vdc |
|
Collector Current |
100 |
IC |
mAdc |
